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RT1N144CT121 Datasheet The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hard- ness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. RT1N144CT121 Price Interfaces t0 8-Bit and/or 16-Bit Peripherals FIFO Operation Permits Overlapping Parallel Port and Peripheral Bus Cycles for Maximum Data Transfer Rate Flexible DRAM Buffer Support and DMA Capability Four Output Lines Individually Configurable as Chip Selects or General Purpose Outputs Three Output Lines Individually Configurable as Strobes or General Purpose Outputs Four Uncommitted Inputs Watchdog Monitors Host Computer Activity Low Battery Detect Input Direct Output for Piezo Transducer Support for Automatic Power Up/Down Prevents Host System Latchup with Powerback Control On Chip Crystal Oscillator RT1N144CT121 on stock Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Three Phase Full Wave Bridge 200 Amperes/600 Volts
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