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RT1N237M-T11-1-ND Datasheet

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RT1N237M-T11-1-ND Price

Type No.	Act' mmt	ve Area mm	I L=250 Mln.	tesponsk nm ryp_	ity A/W L=4 Wrrt	nnt Wp	Dark l o	Current iA Typ,	NEP WHza z 1= 250 nm Typ.	Capa! Vr= OV ax.	iltance pF Vr10V N4ax	PICk~W
OSDl-1	1	1.13 dia	0.03	0.04	0.12	0.16	0.2	0.02	4.0 X 10'12	12	4	1
OSD5-1	5	2.52 dia	0.03	0.04	0.12	0.16	0.4	0,02	4O X 10-12	52	12	3
OSD15-1	15	3.8 X 3.8	0.03	0.04	0.12	0.16	1.2	0.1	8.9 X10-12	150	35	3
ODS50-1	50	7.98 dia	O03	0.04	0.12	0.16	4.0	0.2	1.3 X 10-11	500	110	9
OSD60-1	62	7.9 X 7.9	0.03	0.04	0.12	0.16	5.0	0.3	1,5×10'11	600	130	9
OSD100-1	100	11.3 dia	O03	0.04	0.12	0.16	6.0	0.6	2.2 X 10dt	1000	220	13
OSD200-1	200	15.96 dia	0.03	0.04	0.12	0.16	8.0	1.0	2.8 X 10'11	2000	420	13
OSD300-1	300	19.54 dia	O03	0.04	0.12	0.16	10,0	1.5	3.5 X 10-11	3000	630	15

RT1N237M-T11-1-ND on stock

(For a single-phase input unit) An example of the l/0 voltage characteristics of a level conversion circuit is shown in the figure to the right. The input voltage value that becomes half the output voltage (after voltage conversion) is defined as Vth. The Vth value varies depending on the HVDD and VVDD voltages.

Parameter	Symbol	Values	Unit
Collector-emitter voltage	EO	1 2	V
Collector-emitter voltage	ES	20
Collector-base voltage	BO	20
Emitter-base voltage	VEBO	2
Collector current	c	80	mA
Base current	B	1 0	mA
Total power dissipation Ts " 63 aC	Ptot	580	mW
Junction temperature	Tj	1 50	aC
Ambient temperature		- 65+150
Storage temperature	Tstg	- 65+150

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