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RT1N44BX Datasheet

j < - IF = 50 mA ---- 'F=100mA
=s ----
---- \- IF = 20 mA IF= 10 m)
I\JorrTiaiizea io: IF Pulsed tpw = 100 US Duty Cycle = O.l % I


RT1N44BX Price
Lowering Noise Using the SENSE pin to Kelvin the load will mcrease accuracy of the output voltage during load regulation. For the fixed voltage device, adding a bypass capacitor from ADJ pin to ground improves transient response. A 330pF ceramic capacitor is recommended.
RT1N44BX on stock
Minimum row cycle times is required to complete internal DRAM operation. Row precharge can interrupt burst on any cycle. [CAS Latency - 1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z(tSHZ) after the clcok. Access time from Row active command. tcc '(tRCD + CAS latency - 1) + tSAC Ouput will be Hi-Z after the end of burst. (1, 2, 4, 8 & Full page bit burst)
North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se ltaly: Hamamatsu Photonics ltalia: S R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu it