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RT200-0404-08T-01S-R31-L14   SMD  DC:07-08+  ★专营传感器★ 

RT200-0404-08T-01S-R31-L14 Datasheet
T wo data address generators (DAG s) provide addresses for simultaneous dual operand fetches (from data memory and program memory). Each DAG maintains and updates four address pointers. Whenever the pointer is used to access data (indirect addressing), it is post-modified by the value ofone of four modify registers. A length value may be associated with each pointer to implement automatic modulo addressing for
RT200-0404-08T-01S-R31-L14 Price

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RT200-0404-08T-01S-R31-L14 on stock

Limits
Symbol Parameter Condition Min. Typ. Max Unit
VNI-VNC 15 25
lD Circuit Current VD = 15V, VCIN = 15V VXPi-VXPC 5 10 mA
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1 2 1.5 1.8 V
Vth(OFF) Input OFF Threshold Voltage UN . VN . WN-VNC 1 7 2.0 2.3
sc Short Circuit Trip Level -20" Tj " 125IC, VD = 15V (Fig. 3,6) 300 A
to(SC) Short Circuit Current Delay Time VD = 15V (Fig. 3,6) 0.2
OT VD = 15V Trip level 135 145
OTr Over Temperature Protection Detect Tj of IGBT chip Reset level 125 IC
UV Supply Circuit Under-Voltage -20 " Tj " 125IC Trip level 11.5 12 0 12 5 V
UVr Protection Reset level 12 5
IFO(H) Fault Output Current VD = 15V, VFO = 15V (Note-3) 0 01 mA
IFO(L) 10 15
tFO Minimum Fault Output Pulse Width VD = 15V (Note-3) 1.0 1.8 ms


Symbol Parameter Test Conditions Min Typ. Max Unit
td(on) tr Turn-on Time Rise Time VDD = 200 V ID = 3.5 A RG = 47 I VGS = 10 V (see test circuit, figure 3) 25 75 35 100 ns ns
(di/dt)on Turn-on Current Slope VDD = 320 V ID = 7 A RG = 47 I VGS = 10 V (see test circuit, figure 5) 220 Als
Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 320 V ID = 7A VGS = 10 V 34 7 15 45 nC nC nC