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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
RT8255CT NMB    D/CCALL    4 
    A-RICH HK LECTRON CO.,LIMITED
  • Contact:JING ZHOU
  • Tel:86-755-33377586
  • Fax:86-755-33377578
  • Email: ARICH2@yahoo.cn


RT8255CT NMB    D/CCALL    5 

RT8255CT Datasheet

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS
Gate to Source Leakage Current IGSS VGS = +20V, TC = 250C +10 (Note 51 nA
Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value, TC = 250C +15 (Note 51 o:A
On Resistance rDS(ON) TC = 1250C at Rated ID +70% (Note 6) I
Gate Threshold Voltage VGS(TH) ID = 1.OmA, TC = 250C +70% (Note 6) V


RT8255CT Price
Hlgh tran8lent current capabIlIty - up t0 6500A. Fast msponse time -less than 35ns. Excellent voltage clamping characteristics., Very low tempefature coefficient. Low standbycurrent. Compact and light weight. High energ\/ capabilit\t. High voltago - dependentlndex (N) Very low leakage curfent. Low capacitance. Low overshoot characteristics.
RT8255CT on stock

Drain- source breakdown voltage VGS = 0 V, /D = 0.25 mA, Tj = 25 aC V(BR)DSS 800 V
Gate threshold voltage VGS= VDS, /D = 1 mA VGS(th) 2.1 3 4
Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 aC VDS = 800 V, VGS = 0 V, Tj = 125 aC /DSS 0.1 1 0 1 1 00 UA
Gate-source leakage current VGS = 20 V, VDS = 0 V /GSS 1 0 1 00 nA
Drain-Source on-resistance VGS = 10 V, /D = 5A RDS(on) 0.85 1 1


The PPG312F relies on a stable power supply to produce repeatable pulses within the stated tolerances. A O.luf capacitor from VCC to GND located as close as possible to each VCC pin, is recommended. A wide VCC trace should connect all VCC pins externally, and a clean ground plane should be used.
 
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