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RT9018A-12PQW Datasheet

Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time VSD source-drain (diode forward) voltage trr reverse recovery time Qr recovered charge
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Gate threshold voltage VGE = VCE, /C = 0.1 mA	E(th)	4.5	5.5	6.5	V
Collector-emitter saturation voltage VGE = 15 V, /C = 15 A, Tj = 25 aC VGE = 15 V, /C = 15 A, Tj = 125 aC VGE = 15 V, /C = 15 A, Tj = 150 aC	E(sat)		2.8 3.8 4	3.3 4.3 4.5	V
Zero gate voltage collector current VCE = 1000 V, VGE = 0 V, Tj = 25 aC VCE = 1000 V, VGE = 0 V, Tj = 125 aC	/CES		1	250 1 000	UA
Gate-emitter leakage current VGE = 20 V, VCE = OV	/GES		0.1	1 00	nA

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FEATURE a) Adopting new 4th generation planar IGBT chip, which per- formance is improved by lUm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. . 3~ 150A, 600V Current-sense IGBT for 15kHz switching . 50A, 600V Current-sense regenerative brake IGBT . Monolithic gate drive & protection logic . Detection, protection & status indication circuits for over- current, short-circuit, over-temperature & under-voltage . Acoustic noise-less 15/18.5kW class inverter application

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