RT9133APB Datasheet| PARAMETER | bYMBOL | bUBGROUPS | MINI | MAX | UNIT | | Address Setup Time -120 -150 -200 | tAS | 9. 10, 11 | 0 0 0 | | ns | | Chip Enable to Write Setup Time (WE Controlled) -120 -150 -200 | tcs | 9. 10, 11 | 0 0 0 | | ns | | Write Pulse Width CE Controlled -120 -150 -200 WE Controlled -120 -150 -200 | tcw tWP | 9. 10, 11 | 200 250 350 200 250 350 | | ns | | Address Hold Time -120 -150 -200 | lAH | 9. 10, 11 | 150 150 200 | | ns | | Data Setup Time -120 -150 -200 | lDs | 9. 10, 11 | 75 100 150 | | ns | | Data Hold Time -120 -150 -200 | tDH | 9. 10, 11 | 10 10 10 | | ns | | Chip Enable Hold Time (WE Controlled) -120 -150 -200 | tCH | 9. 10, 11 | 0 0 0 | | ns | | Write Enable to Write Setup Time (CE Controlled) -120 -150 -200 | tws | 9. 10, 11 | 0 0 0 | | ns | | Write Enable Hold Time (CE Controlled) -120 -150 -200 | tWH | 9. 10, 11 | 0 0 0 | | ns | | | | | | |
RT9133APB Price| Parameter | Symbol | Limits | U nit | | Collector-base voltage | VCBO | -15 | V | | Collector-emitter voltage | VCEO | -12 | V | | Emitter-base voltage | VEBO | -6 | V | | Collector current | Ic | -500 | mA | | ICP | 1 | A | | Power dissipation | Pd | 120 | mW 8 | | Junction temperature | Tj | 150 | oc | | Range of storage temperature | Tstg | -55 to +125 | oc | | | | |
RT9133APB on stock . Phototransistor output . No contact surface sensing . Daylight filter on the sensor . Emitter X = 940 nm @ 2001 Fairchild Semiconductor Corporation DS300254 9/21/01 1 0F 6 www.fairchildsemi.com
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