| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| RT916350CG | ?N/A | 09+ | 现货热卖，全新原装，欢迎来电 | 5180 |
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| RT916350CG | RICHTEK | 08+/pb | new&original | 30000 |
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| RT916350CG | RICHTEK | BID | 30000 | new&original FOB HK | 08+/pb |
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| RT916350CG | RT/立崎 | SOT223/TO2 | 07环保 | long-termstock | 258000 |
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RT916350CG Datasheet
RT916350CG Price This architecture, shown in Figure 6, is very similar to the superheterodyne. In this case, the first mixer utilizes an LO that is at a fixed frequency, and all RF band channels are translated to IF, retaining their positions relative to one another. The second mixer utilizes a tunable LO, thus selecting the desired channel to be translated to baseband. A subsequent lowpass filter suppresses adjacent channels. RT916350CG on stock NOTES : 1. Samsung can support VDDQ 2.5V(in general case) and l.8V(in specific case) for VDD 2.5V products. Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ l.8V(Min l.65V) 2. VIH (max) = 3.OV AC.The overshoot voltage duration is i 3ns. 3. VIL (min) = -1.OV AC. The undershoot voltage duration is i 3ns. 4. Any input OV i VIN i VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs. 5. Dout is disabled, OV i VOUT i VDDCl. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. |
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