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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SG-51P16.0000MHZBS EPSON    N/A    97 

SG-51P16.0000MHZBS Datasheet

ltem Symbol Rating Unit
Drain-Source-Voltage V DS 60 V
Continous Drain Current ID ±100 A
Pulsed Drain Current I D(puls) +400 A
Gate-Source-Voltage V GS +20 V
Maximum Avalanche Energy E AV 1268.3 mj*
Max. Power Dissipation PD 150 W
Operating and Storage Temperature Range T ch 150 aC
T sta -55+150 aC


SG-51P16.0000MHZBS Price
If the Rewrite DDRAM command is input (C / D is HIGH), the four bits of the display data in the Rewrite DDRAM command are written to the specified DDRAM address. The four bits of the display data are written sequentially, starting from the MSB, to the MSB of the DDRAM bits.
The X24C04 is fabricated with Xicor's advanced CMOS Textured Poly Floating Gate Technology. The X24C04 utilizes Xicor's proprietary DirectWriteTM cell providing a minimum endurance of 100,000 cycles and a minimum data retention of 100 years.

PARAMETER Symbol Limit Unit
Power Supply Voltage VMAX -0.3+6.5 V
Power Dissipation Pd 5401 mW
Operating Temperature Range Topr -30+85
Storage Temperature Range Tstg -55+125