| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
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SKKT13208D Datasheet co Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability co IXYS advanced low Qg process co Low gate charge and capacitances - easier to drive - faster switching co Low RDScon) co Very low insertion inductance2nH) co No beryllium oxide (Be0) or other hazardous materials SKKT13208D Price Output Capacitors: C2(Requiredl' C3(Optional) The ESR of r uired capacitor (C2) must not be greater than 15 0m fj thE12eq:llytic ,apacitors have poor ripple per- formance at frequencies greater than 400kHz but excellent low frequency transient response. Above the ripple fre- quency, ceramic capacitors are necessary to improve the transient response and reduce any high frequency noise components apparent during higher current excursions. Preferred low ESR typ iumbers are identified in Tab,e 1. The opt:,W;lo aOba+tfo:r:go;pt,l:u(C3) for V02 can have an ESR of up to : num performance and ripple reduction. (Note: Vendor part numbers for the optional capacitor, C3, are not identified in the table. Use the same series selected for C2) SKKT13208D on stock
DEFINITIONS VF = Instantaneous forward voltage (pw = 300as, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of to + tb. to = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6) RejC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. |
