| Parameter | 54MT.KB | 94MT.KB | 104MT.KB | Units | Conditions |
| In Maximum IRMS output current | 50 | 90 | 100 | A | For all conduction angle |
| o @ Case temperature | 80 | 80 | 80 | oc |
| ITSM Maximum peak, one-cycle | 390 | 950 | 1130 | A | t= 10ms | No voltage | |
| forward, non-repetitive | 410 | 1000 | 1180 | t= 8.3ms | reapplied |
| on state surge current | 330 | 800 | 950 | t= 10ms | 100% V .. ,- RRM |
| 345 | 840 | 1000 | t= 8.3ms | reapplied | Initial |
| 12t Maximum l2t for fusing | 770 | 4525 | 6380 | A2S | t= 10ms | No voltage | Tj = Tj max. |
| 700 | 4130 | 5830 | t= 8.3ms | reapplied |
| 540 | 3200 | 4510 | t= 10ms | 100% VRRM |
| 500 | 2920 | 4120 | t= 8.3ms | reapplied |
| 12 fl Maximum l2 pt for fusing | 7700 | 45250 | 63800 | A2f$ | t = 0.1 t0 10ms, no voltage reapplied |
| VT(TO)1 Low level value of threshold voltage | 1 16 | 0.99 | 0.99 | V | (16.7% x * x IT(AV) < I < # X IT(AW), @ Tj max. |
| VT(T0)2 High level value of threshold voltage | 1 44 | 1 19 | 1 15 | (l > #: X lflAV, @ Tj max. |
| rtl Low level value on-state slope resistance | 12 54 | 4 16 | 3.90 | m | (16.7% x * x IT(AV) < I < # X IT(AV, @ Tj max. |
| rt2 High level value on-state slope resistance | 11 00 | 3 56 | 3 48 | (l > # X lflAV, @ Tj max. |
| VTM Maximum on-state voltage drop | 2 68 | 1 55 | 1 53 | V | lpk = 150A, Tj = 250C tp = 400ps single junction |
| di/dt Max. non-repetitive rate of rise of turned oncurrent | 150 | A/ps | Tj = 250C, from 0.67 VDRkn, ITkn = # x IT(AV), lg = 500mA,tr < 0.5 ps, tp > 6 ps |
| lu Max. holding current H | 200 | mA | Tj = 250C, anode supply = 6V, resistiveload, gate open circuit |
| IL Max.latching current | 400 | Tj = 250C, anode supply = 6V, resistive load |
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