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SKKT71-08E Datasheet

Rectangularwave 0=60'J L Rectawularwave O=120.J-L
- Rectangularwave 8=180 Sine wave=180'
1 S
Rectangular wave l}
j k| __qGOo
1I
Sine waL 180' 1 3600 X =1


SKKT71-08E Price

Ta= 100< rJ btTa -25
-J- ¨ I I I I l
II Ta - 250C
I J l l l l l l COMMON SOURCE J f
f l l VDS= -3V


SKKT71-08E on stock
General description: The QPP-015 QuikPACTM RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistor is fabricated using Xemod's advanced design LDMOS process. The gate terminal is connected directly to the control voltage pin, allowing direct control of the bias. The user must supply the proper value of VGS to set the desired quiescent current.

SYMBOLS 3611GP 1N 3612GP 1N 3613GP 3614GP f 3957GP UNITS
* Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 Volts
* Maximum RMS voltage VRMS 140 280 420 560 700 Volts
* Maximum DC blocking voltage VDC 200 400 600 800 1000 Amps
* Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=750C I(AV) 1.0 Amps
* Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30.0 Amps
Maximum instantaneous forward voltage at l.OA VF 1.0 Volts
* Maximum DC reverse current TA=250C at rated DC blocking voltage TA=1500C IR 1.0 300.0
Typical reverse recovery time (NOTE l) trr 2.0 ccs
Typical junction capacitance (NOTE 2) CJ 8.0 pF
Typical thermal resistance (NOTE 3) ROJA ROJL 55.0 25.0 oC/w
Operating junction and storage temperature range TJSTG -65 to +175 aC