Error in write or read operation Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail- ure after erase or program, block replacement should be done. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
SKSCPCE010 Price| I I | | | | | |
| Tamb= 25 C | | | | | |
| AVCL = 1 | | | | | |
| Vo = Vcc /2 Standby OFF | | | | | |
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SKSCPCE010 on stock| l DENTlFlER | Ao | I/O | l/OR | I/O | l/04 | lO | I/O | I/O | l/00 | HEX DATA |
| MANUFACTURER CODE | VIL | 0 | 0 | 0 | 0 | 0 | 1 | 1 | 1 | 07 |
| DEVICE CODE | VIH | 0 | 0 | 1 | 1 | 1 | 0 | 0 | 0 | 38 |
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| _DIN111-I=1 | -t | 1-Lio | |
| PARAMrER SYMBOL | MIN | TYP | MAX. UNIT | TEST CONDITION |
| Responsivity, single ended R differential | | 100 kV/W 200 | =1300 nm Note 1 |
| Output Voltage Vo (differential, peak to peak) Bandwidth (3 dBel) | | 1.2 V 140 MHz | Pf=l VW |
| Noise-Equivalent Power NEP | | 15 nW | =1300 nm |
| Sensitivity (BER10-9) S | -39 dBm | =1300 nm Extinction Ratio=0 |
| Dynamic Range | 36 | 40 dB |
| Output Resistance Ro (differential) | | 50 n | |
| Power Supply Current IDD | | 32 40 mA | |
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