SKT24-08C，there are the best SKT24-08C suppiers all over the world here.These are the list and detailed contact method of SKT24-08C suppliers all over the world as follows.You can buy or get informations of SKT24-08C through email , message or tel.

suppliers of SKT24-08C and PDF data of SKT24-08C

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SKT24-08C Datasheet

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
td(off) tr	Turn-off Delay Time Fall Time	VDD = 15 V ID = 1.5 A RG = 4.7 I VGS = 4.5 V (Resistive Load, see fig. 3)		15 29		ns ns

SKT24-08C Price

2SB715, 2SB716	250 t0 500	400 t0 800
2SB716A	250 t0 500

SKT24-08C on stock

		(1) Tc=Ta (2) With a 100 x 100 x 2mm
		Al heat sink (3) Without heat sink
		(Pc=2 0W)

			(1)

			(2)
			(3)

Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the out- put matching network and power supply feed line.

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		Exact Matc