| | Parameter | Min | Typ. | Max | Units | Conditions |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | -100 | | | V | VGS = OV, ID = -250pA |
| AV(BR)DSS/ATj | Breakdown Voltage Temp. Coefficient | | -0.12 | | V/oc | Reference t0 250C, ID = -1.OmA |
| RDS(on) | Static Drain-to-Source On-Resistance | | | 0 205 | Q | VGS = -10V, ID = -7.8A |
| VGS(th) | Gate Threshold Voltage | -2.0 | | -4.0 | V | VDS = VGS, ID = -250pA |
| 9fs | Forward Transconductance | 3 2 | | | S | VDS = -50V, ID = -7.8A |
| | | | | -25 | | VDS = -100V, VGS = OV |
| IDSS | Drain-to-Source Leakage Current | | | -250 | UA | VDS = -80V, VGS = OV, TJ = 1500C |
| | Gate-to-Source Forward Leakage | | | 100 | | VGS= 20V |
| IGSS | Gate-to-Source Reverse Leakage | | | -100 | nA | VGS= -20V |
| Qg | Total Gate Charge | | | 58 | | ID = -8.4A |
| Qgs | Gate-to-Source Charge | | | 8 3 | nC | VDS = -80V |
| Qgd | Gate-to-Drain ("Miller") Charge | | | 32 | VGS = -10V, See Fig. 6 and 13 |
| td (on) | Turn-On Delay Time | | 15 | | | VDD = 50V |
| t r | Rise Time | | 58 | | ID = -8.4A |
| td (off) | Turn-Off Delay Time | | 45 | | ns | RG = 9.1Q |
| tf | FaIITime | | 46 | | RD =6.2Q, See Fig. 10 |
| LD | Internal Drain Inductance | | 4 5 | | | Between lead, D |
| Ls | Internal Source Inductance | | 7 5 | | nH | 6mm (0.25in.) from package ( and center of die contact~ s |
| ciss | Input Capacitance | | 760 | | pF | VGS = OV |
| cOss | Output Capacitance | | 260 | | VDS = -25V |
| Crss | Reverse Transfer Capacitance | | 170 | | f = 1.OMHz, See Fig. 5~ |
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