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SL14-MH Datasheet

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SL14-MH Price

CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 80 V
VCES 80 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 5 V
DC Ic 1.0 A
Collector Current Pulse ICP 3
Base Current IB 200 mA
Collector Power Dissipation Pc* 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150


SL14-MH on stock
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Gp power gain f= 50 MHz 18 19 dB
f= 600 MHz 19 dB
SL slope cable equivalent f = 40 t0 600 MHz 0.2 212 dB
FL flatness of frequency response f = 40 t0 600 MHz +0.3 dB
S11 input return losses f = 40 t0 80 MHz 20 dB
f= 80 t0 160 MHz 19 dB
f= 160 t0 600 MHz 18 dB
S22 output return losses f = 40 t0 80 MHz 20 dB
f= 80 t0 160 MHz 19 dB
f= 160 t0 600 MHz 18 dB
S21 phase response f= 50 MHz -45 +45 deg
CTB composite triple beat 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz -62 dB
Xmod cross modulation 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz -66 dB
CSO composite second order distortion 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz -60 dB
d2 second order distortion note 1 -70 dB
Vo output voltage dim = -60 dB; note 2 63 dBmV
F noise figure f= 600 MHz 8 dB
ltot total current consumption (DC) note 3 435 mA