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SL1400256BF Datasheet

ABSOLUTE MAXIMUM RATNNGS (TA = 250C UNLESS OTHERWISE NOTED)
Parameter	Symbol	10 secs	Steady State	Unit
Drain-Source Voltage	VDS	200		V
Gate-Source Voltage	VGS	20		V
I TA = 250C		4 0	2 85	A
Continuous Drain Current (Tj = 1500C)a I TA = 700C	ID	3 2	2 3
Pulsed Drain Current	IDM	40
Avalanch Current I L = 0.1 mH	IAS	15
Continuous Source Current (Diode Conduction)a	Is	2 6	1 3
I TA = 250C		3 1	1 56
Maximum Power Dissipationa I TA = 700C	PD	2 0	1 0	W
Operating Junction and Storage Temperature Range	Tj, Tstg	-55 t0 150		oc

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NOTES IStresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation ofthe device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Specification is for device on a two-layer board with 2500 mm2 0f 2 0z. copper at +250C 8-lead SOIC package: OJA = 95.OoC/W.
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						I/O Pin
cs	WE	OE	LB	UB	Mode	l/01~1/08	l/09~1/016	Supply Current
H	x	X*	x	x	Not Select	High-Z	High-Z	ISB, ISB1
L	H	H	x	x	Output Disable	High-Z	High-Z	lcc
L	x	x	H	H	Output Disable	High-Z	High-Z	lcc
L	H	L	L	H	Read	DOUT	High-Z	lcc
			H	L		High-Z	DOUT
			L	L		DOUT	DOUT
L	L	x	L	H	Write	DIN	High-Z	lcc
			H	L		High-Z	DIN
			L	L		DIN	DIN

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VISP	Protection supply voltage3	for valid protection	4		V
VDDP(T)	Over temperature protection Protected drain source supply voltage	Vls=5V		50	v
VDDP(P) PDSM	Short circuit load protection4 Protected drain source supply voltage5 Instantaneous overload dissipation	Vls = 5V Tmb = 25 aC		20 1.3	V kW

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