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suppliers of SL1987 and PDF data of SL1987

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SL1987 ZIOLG  DIP  99    1000 


SL1987 ZIOLG    99    1000 


SL1987 ZIOLG  DIP  Skype:gtuitgah@163.com  1-2days  1000 
    aaahk
  • Contact:wayne
  • Tel:86-755-83954348
  • Fax:86-755-33281191
  • Email: gtuitgah@163.com
SL1987 ZIOLG  N/A  9+  New & original, stoc  8340 
    TONGGUANG (H.K.) Electrics Co...
  • Contact:JAMES
  • Tel:86-755-83996795
  • Fax:86-755-83996795
  • Email: tongguangic@gmail.com
SL1987 ZIOLG  DIP  99    1000 
SL1987 ZIOLG    2005+    1000 
SL1987 ZIOLG  DIP  07+/08+    1000 
    TACT (H.K.) Century Co., Limit..
  • Contact:Neo
  • Tel:86-755-83014280
  • Fax:86-755-83014280
  • Email: neo7788@126.com
SL1987 DIP    ZIOLG    99 
    HK Cheungwah Electronics Co.,l..
  • Contact:Kary
  • Tel:86-755
  • Fax:
  • Email: szsxic@gmail.com

SL1987 Datasheet
PTC provides a new version of PT2268 which can be identified by the "B" mark on the lower right hand corner ofthe IC's topcode (beside the date code). Please refer to the diagram on the Order Information Section. The difference between the old and new version is the extemal application circuit in the OSCl and OSC2 pins. (see Oscillator Section)
SL1987 Price

Limits
Symbol Parameter Test conditions Min. Typ Max Unit
ICES Collector cutoff current VCE = VCES, VGE = OV 1 mA
VGE(th) Gate-emitter threshold voltage lc = 1.OmA, VCE = 10V 4 5 6 7 5 V
IGES Gate-emitter cutoff current VGE = VGES, VCE = OV 0 5 CA
Collector-emitter Tj= 25IC 2 7 3 4 V
VCE(sat) saturation voltage Tj= 150IC lc = 10A, VGE = 15V (Note. 4) 2 45
Cies Input capacitance 2 0 nF
Coes Output capacitance VCE = 10V 1 5 nF
C res Reverse transfer capacitance VGE = OV 0 4 nF
QG Total gate charge Vcc = 600V, lc = 10A, VGE = 15V 50 nC
td (on) Turn-on delay time Vcc = 600V, lc = 10A 100 ns
tr Turn-on rise time VGEI = VGE2 = 15V 200 ns
td (off) Turn-off delay time RG = 311 150 ns
tf Turn-o fall time Resistive load 350 ns
VEC (Note. 11 Emitter-collector voltage IE = 10A, VGE = OV 3 5 V
trr (Note 11 Reverse recovery time IE = 10A, VGE = OV 250 ns
Qrr (Note. Reverse recovery charge die / dt = - 20A / c6 0 08 CC
RchO-f)Q {Note 5} Thermal resistance IGBT part, Per l/6 module 2 2 IC/W
RihO-f)R (Nole. FWDi part, Per l/6 module 3 1 IC/W


SL1987 on stock

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SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3 V
lc collector current (DC) 200 mA
Ptot total power dissipation Ts " 90 IC; note 1 2.25 W
Tstg storage temperature -65 +150 ][C
Tj junction temperature 175