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SL222R018B Datasheet generated by the chip and controlled by the same input pin ADV/LD in High state. Write cycles are internally self-time and synchronous with the rising edge of the clock input and when R/w is Low. The feature simplified the write interface. Individual Byte enables allow individual bytes to be written. BWl controls l/Oa pins; BW2 controls l/Ob pins; BW3 controls l/Oc pins; and BW4 controls l/Od pins. Cycle types can only be defined when an address is loaded. The SRAM operates from a +2.5V power supply, and all inputs and outputs are LVTTL-compatible. The device is ideally suited for high bandwidth utilization systems. SL222R018B Price
SL222R018B on stock . Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching Features . Progressive scan allows individual readout of the image signals from all pixels. . High horizontal and vertical resolution (both approx. 800TV-lines) still image without a mechanical shutter . Supports high frame rate readout mode (effective 512 lines output, 30 frames/s) . Square pixel . Horizontal drive frequency: 28.636MHz . No voltage adjustments (reset gate and substrate bias are not adjusted.) . R, G, B primary color mosaic filters on chip . High resolution, high color reproductivity, high sensitivity, low dark current . Low smear, excellent antiblooming characteristics * Continuous variable-speed shutter |
