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SL4029BN Datasheet

MR(Magneto-resistance)sensor * Volume and mounting area are 50% smaller than MRSS22L. * Height is about 4mm lower than MRSS22L. *Operating in one way magnetic field *Operating with independent pole (easily manufacture) *Superior Temperature stability *Lead free goods
SL4029BN Price

Symbol	Parameter	Test Conditions	Min	Typ.	Max	Unit
V(BR)DSS	Drain-source Breakdown Voltage	ID = 1 mA VGS = OV	500			V
IDSS	Zero Gate Voltage Drain Current (VGS = 0)	VDS = Max Rating VDS = Max Rating x 0.8 Te = 125 0C			200 1	mA
IGSS	Gate-body Leakage Current (VDS = 0)	VGS=±20 V			±200	nA

SL4029BN on stock



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. Ultra low power consumption - Burst Mode Read: 90 mA @ 66 MHz maxr - Program/Erase: 50 mA max - Standby mode: CMOS: 60 pA max . 1 million write cycles per sector typical . 20 year data retention typical . Versatilel/OTM control - Device generates data output voltages and tolerates data input voltages as determined by the voltage on the Vio pin - 1.65 V t0 2.75 V compatible I/O signals - 3.6 V tolerant I/O signals

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