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Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Static Characteristics
Gate Trigger Current	IGT	VD = 12V, IT = O.1A		5	35	mA
Gate Trigger Current				8	35	mA
MT2 (-), G (-)				1 0	35	mA
MT2 (-), G (-)				22	70	mA
Latching Current	IL	VD = 12V, IT = O.1A		7	40	mA
Latching Current				20	60	mA
MT2 (-), G (-)				8	40	mA
MT2 (-), G (-)				1 0	60	mA
Holding Current	IH	VD = 12V, IT = O.1A		6	30	mA
On-State Voltage	VT	IT= 20A		1.2	1.6	V
Gate Trigger Voltage	VGT	VD = 12V, IT = O.1A		0.7	1.5	V
Gate Trigger Voltage	VGT	VD = 400V, IT = O.1A, Tj = +125IC	0.25	0.4		V
Off-State Leakage Current	ID	VD = VDRMmax, Tj = +125IC		0.1	0.5	mA
Dynamic Characteristics
Critical Rate-of-Rise of Off-State Voltage	dVD/dt	VDM = 67% VDRMmax, Tj = +125IC, Exponential Waveform, Gate Open	1 00	250		V/ccS
Critical Rate-of-Change of Commutating Voltage	dVcom/dt	VDM = 400V, Tj = +95IC, ITRMS = 16A, dlcom/dt = 7.2A/ms, Gate Open		20		V/ccs
Gate Controlled Turn-On Time	tgt	ITM = 20A, VD = VDRMmax, IG = O.1A, dIG/dt = 5A/~s		2		0S
Isolation Characteristics
RMS Isolation Voltage from All 3 Pins to External Heatsink	VISOL	R.H. " 65%, Clean and Dustfree			1 500	V
Capacitance from T2 to External Heatsink	CISOL	f=lMHz		1 2		pF

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