As mentioned previously, the capacitance on each side of the crystal is in series with the crystal. This mean the total capac- itance on each side of the crystal must be twice the specified load capacitance (CL). While the capacitance on each side of the crystal is in series with the crystal, trim capacitors (Cel,Ce2) should be calculated to provide equal capacitance loading on both sides.
SV1508FM Price| Symbol | Test Conditio ns | Min | Typ. | Max | Unit |
| FREQ | Frequency Range | 925 | | 960 | MHz |
| Gain | POUT= 90 W | 12 | 13 | | dB |
| PldB | Over frequency range: 925 - 960 MHz | 90 | 100 | | W |
| Flatness | Over frequency range and @ POUT = 90 W | | | +1- 0.5 | dB |
| Flatness | POUT from O.1W t0 90 W | | | 1 | dB |
| ND at PidB | PldB | 40 | 45 | | % |
| IRTL | Input return Loss POUT from O.1W t0 90 W | | -20 | -15 | dB |
| Harmonic | POUT= 90 W | | | -30 | dBc |
| VSWR | Load Mismatch all phases @ POUT = 90 W | 101 | | | |
| Spurious | 10:1 VSWR all phases and POUT from 0.1 t0 90 W | | | -76 | dBc |
| IMD3 | POUT = 90 WPEP | | | -25 | dBc |
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SV1508FM on stock| Mode of operation: 2-tone CW, 100 kHz spacing; IDQ = 1130 mA; f = 890 MHz |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| Gp | gain power | PL = 125 W (PEP) | 14.6 | 15.5 | | dB |
| 11D | drain efficiency | 33 | 37 | | % |
| IRL | input return loss | | -12 | -6 | dB |
| d3 | third order inter modulation distortion | | -32 | -25 | dBc |
| Mode of operation: GSM EDGE; IDQ = 750 mA; f = 920 MHz |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| Gp | gain power | PL= 45 W (AV) | | 15 | | dB |
| 11D | drain efficiency | | 32 | | % |
| ACPR 400 | adjacent channel power ratio | | -64 | | dBc |
| EVM (AV) | EVM rms average signal distortion | | 2 | | % |
| EVM peak | EVM rms peak signal distortion | | 2.2 | | % |
| Mode of operation: 1-tone CW; IDQ = 1000 mA; f = 920 MHz |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| Gp | gain power | Pu = PL i dB = 125 W | | 16.5 | | dB |
| 11D | drain efficiency | | 54 | | % |
| | | | | | |
| SYMBOL | PARAMETER | RATING | UNIT |
| Vcc lcc | Supplyi Voltage-forced mode Current-fed mode | +18 30 | V mA |
| IOUT | Output transistor (at 20-30V max) Output current Collector voltage (Pin 15) Max. emitter voltage (Pin 14) | 40 Vcc+1.4V +5 | mA V V |
| LK | Operating ambient temperature range SE5560 NE5560 | -55 to +125 0 t0 70 | YC ][C |
| TSTG | Storage temperature range | -65 to +150 | YC |
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