I Any and all SANYO products described or contained applications that require extremely high levels of re control systems, or other applications whose failure physical and/or material damage. Consult with your any SANYO products described or contained herein
SVFD21H335M on stock| Symbol | Parameter | Min | Typ. | Max | Units | Conditions |
| IS | Continuous Source Current (Body Diode) | | | 17 | A | MOSFET symbol ID showing the |
| ISM | Pulsed Source Current (Body Diode) Oi | | | 68 | G integral reverse p-n junction diode. Is |
| VSD | Diode Forward Voltage | | | 1.5 | V | TJ = 250C, Is = 17A, VGS = OV |
| trr | Reverse Recovery Time | | 520 | 780 | ns | TJ = 250C, IF = 17A |
| Qrr | Reverse RecoveryCharge | | 5620 | 8430 | nC | di/dt = lOO/Vps |
| t | Reverse Recovery Time | | 580 | 870 | ns | Tj = 1250C, IF = 17A |
| Qrr | Reverse RecoveryCharge | | 6470 | 9700 | nC | di/dt = lOO/Vps |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
| | | | | | |
| | | | | | | T= 250C |
| | | | IB= | 00 yA | | |
| | | | | | | | | |
| | j | | | | 250 UA | |
| | | | | | 200 yA | |
| | | | | | | | | |
| | | | | | | 150 yA | |
| | | | | | | | | |
| | | | | | | -1( | OyA |
| | | | | | | | 50 | UA |
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