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SVHD21V685M Datasheet

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) 9fs Min (mS) IG Max (pA) IVGSl - VG021 Max (mV)
2N 5196 -0.7 to -4 -50 1 -15 5
2N 5197 -0.7 to -4 -50 1 -15 5
2N 5198 -0.7 to -4 -50 1 -15 10
2N 5199 -0.7 to -4 -50 1 -15 15


SVHD21V685M on stock

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base 50 V
VEBO emitter-base voltage open collector 10 V
V1 input voltage positive negative +40 -10 V V
10 output current (DC) 100 mA
ICM peak collector current 100 mA
Ptot total power dissipation Tamb " 25 IC; note 1 200 mW
Tstg storage temperature -65 +150 ][C
Tj junction temperature 150
Tamb operating ambient temperature -65 +150
Per device
Ptot total power dissipation Tamb25 IC 300 mW


RATED VOLTAGE APPLIED
DC R thO_a) =60 0C/W (NO HEAT SINK)
180 0 SQUARE WAVE I \< - I