SW006010 Datasheet| Collector to base breakdown | V(BR)CBO | -55 | | | V | le = -10 cCA, IE = 0 le = -1 rriA, RBE = | | voltage Collector to emitter breakdown voltage | V(BR)CEO | -55 | | | V | IE = -10 le = 0 | | Emitter to base breakdown voltage | V(BR)EBO | -5 | | | | | | Collector cutoff current | ICBO | | | -0.1 | cCA | VCB= -18 V, IE = 0 | | Emitter cutoff current | IEBO | | | -0.05 | | VEB= -2 V, IE = 0 | | DC current transfer ratio | hFE1 | 160 | | 500 | | VCE= -12 V, le = -2 mA | | Base to emitter voltage | VBE | | -0.66 | -0.75 | V | VCE = -12 V, le = -2 mA | | Collector to emitter saturation voltage | VCE(sat, | | -0.1 | -0.5 | V | le = -10 rTiA, lB = -1 rTiA | | Gain bandwidth product | f | | 250 | | MHz | VCE = -12 V, le = -2 mA | | Collector output capacitance | Cob | | 2.5 | | pF | VCB = -10 V, IE = 0, f = 1 MHz | | | | | | | |
SW006010 Price| Symbol | Parameter | Value | Unit | | VCES | Collector-Emitter Voltage (VBE = 0) | 700 | V | | VCEO | Collector-Emitter Voltage (lB = 0) | 400 | V | | VEBO | Emitter-Base Voltage (lc = 0) | 9 | V | | lc | Collector Current | 4 | A | | ICM | Collector Peak Current (tp < 5 ms) | 8 | A | | lB | Base Current | 2 | A | | IBM | Base Peak Current (tp < 5 ms) | 4 | A | | Ptot | Total Dissipation at Te = 25 0C | 55 | W | | Tstg | Storage Temperature | -65 t0 150 | oC | | Ti | Max. Operating Junction Temperature | 1 50 | oC | | | | |
SW006010 on stock High Usable Density - A 12-byP16 array of 19210gic cells provides 6,000 total available gates, with 2000 typically usable "gate array" gates in 68- pin and 84-pin PLCC, 84-pin CPGA, 100-pin CQFP, 100-pin VQFP,and 100- pin TQFP packages. | | 0 25 7.0 | 7.5 0.5 | 10 5.0 | 50 1 0 | 25 80 | 1 0 1 0 | 0.5 0.3 | +3.0 +3.0 | ±18 +18 | General Purpose Precision | N/626, D/751 N/626, D/751 | | | | | | | | | | | | |
|
