| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 09+ | 6000 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 7250 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 06+ | new and original in | 6000 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | shenzhen stock | 120000 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 6000 |
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| SW1210CTR15J | 3225 | 6000 |
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| SW1210CTR15J | 08+ |
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| SW1210CTR15J | N/A | 3225 | 6000 |
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| SW1210CTR15J | 7500 |
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SW1210CTR15J Datasheet Notes: 2. This is the value when the device is mou nted on a glass-epoxy substrate (40 mm x 40 mm x l.6 mm). However, For the HA17384HRP and HA17385HRP, Derating should be performed with 8.3 mW/IC in the Ta > 43IC range if the substrate wiring density is 10%. Derating should be performed with 11.1 mW/IC in the Ta > 63IC range if the substrate wiring density is 30%. For the HA17384SRP, Derating should be performed with 8.3 mW/IC in the Ta > 68IC range if the substrate wiring density is 10%. Derating should be performed with 11.1 mW/IC in the Ta > 89IC range if the substrate wiring density is 10%. SW1210CTR15J Price
SW1210CTR15J on stock
Features . High fT: fT= 600MHz . High breakdown voltage : VCEO = 70Vmin . Small reverse transfer capacitance and excellent high-frequency characteristic : Cre = 1.9pF/NPN, 2.4pF/PNP. . Complementary PNP and NPN types . Adoption ofFBET process . Micaless type |
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