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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SWCUT1000S02 P11 0453    39 
    Liverpool (Hong Kong) Electron..
  • Contact:Jessica
  • Tel:86-755-83957717
  • Fax:
  • Email: info@lvphk.com


SWCUT1000S02 P11     08+     
    shenzhen qiangcheng electronic..
  • Contact:chen
  • Tel:86-755-83666435
  • Fax:
  • Email: 43710541@qq.com
SWCUT1000S02 P11   BGA  0453+  和兴信誉库存  10 
    Wo Hing eletronics trading com..
  • Contact:Rabbit Yuan
  • Tel:86-755-83674377
  • Fax:86-755-83290578
  • Email: sales10@wohing-ic.cn
SWCUT1000S02 P11   0453    39 
    Liverpool(HongKong)Electronics..
  • Contact:Jessica
  • Tel:86-755-83957717
  • Fax:
  • Email: info@lvphk.com

SWCUT1000S02 P11 Datasheet
Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation ofthe device at these or any other condi- tions above those indicated in the operational sec- tions ofthis specification is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect reliability.
SWCUT1000S02 P11 Price

Input High Voltage VIH VSS+ 2.4 VDD+0.3 VDC
Input Low Voltage VIL -0.3 + 0.8 VDC
Input Leakage Current VIN =O to VDD IIN 5 A
Input Capacitance VIN=O TA=250C measured at f = 1.OMHz CIN 10 pF
Input Capacitance,D7 Input CIN(D7) 20 pF
Input Current, D7 in TRI-Stale "OFF" State VIN - 0.4 t0 2.4 V IIN (TS) 2.0 5.0 /LA


SWCUT1000S02 P11 on stock

SYMBOL PARAMETER MIN MAX UNIT TEST CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage 75 V C= 10LiA
V(BR)CEO Collector-Emitter Breakdown Voltage 60 v c10 mA(1)
V(BR)EBO Emitter-Base Breakdown Voltage 5 V E=lO yA
ICB01 Collector-Base Cutoff Current 10 nA VCB= 50V
ICB02 Collector-Base Cutoff Current 10 UA VBC = 50 V, TA = 1500 C
IEBO Emitter-Base Cutoff Current 100 nA VEB=3V
hFEl Forward Current Transfer Ratio 75 VCE = 10 V, lC = 100 LtA
hFE2 Forward Current Transfer Ratio 100 VCE = 10 V, lc = 1.0 mA
hFE3 Forward Current Transfer Ratio 100 VCE = 10 V, lC = 10 mA(1)
hFE4 Forward Current Transfer Ratio 100 300 VCE = 10 V, lC = 150 mA(1)
hFE7 Forward Current Transfer Ratio 40 VCE = 10 V, lC = 150 mA, TA = -550 C(i)
hFE5 Forward Current Transfer Ratio 50 VCE = 10 V, lC = 300 mA(1)
hFE6 Forward Current Transfer Ratio 50 VCE = 1.0 V, lC = 150 mA(1)
VCE(SAT)1 VCE(SAT)2 VBE(SAT)1 VBE(SAT)2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.4 1.6 1.3 2.6 V V V v lc = 150 mA, lB = 15 mA(l) lc = 500 mA, lB = 50 mA(l) lc = 150 mA, lB = 15 mA(1) lc = 500 mA, IB = 50 mA(1) - -
E
I hfeI 8 Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio pF 2 VCB = 10 V, IE = 0, 100 kHz S f < 1 MHz 10 VCE = 20 V, lc = 20 mA, f = 100 MHz
Cobo Open Circuit Output Capacitance 25 pF 50 yEB=2.OV,IE=O,100kHzifilMHz ns Cibo Vcc = 30 V,lc = 150 mA, IBl = 15 mA Input Capacitance ton Turn-On Time
140 ns vcc = 30 V, lc = 150 mA, IBl = lB2 = 15 mA, toff Turn-Off Time
PW = 200 ns
SYMBOL PARAMETER MIN (1) Pulsed Test: Pulse Width = 300 ys +50, 1-2 % Duty Cycle MAX OptekTe h o~ogy nc. 1215W~rosbyRoad Carrollton,Texas75006 ~9~2~323-2200 Fax~9~2~3232396 15-17 UNIT TEST CONDITIONS


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400mA
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