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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SWI1008TR82J FIXED        5400 



SWI1008TR82J Datasheet

Forward voltage Peak emission wavelength Luminous intensity Speccrum radiacion bandwidth Reverse current Terminal capacitance Page for
Lens type Model No VF 'V) A,p(nm) IF Iv(mcd) IF CPL(nm) IF IR(CCA) VR Ct(pF) characferistics
TYP MAX TYP (mA) TYP (mA) TYP (mA) MAX (V) TYP (MHz) diagrams
GL5PR4 1 9 2 3 695 5 3 0 5 100 5 IO 4 55 l ÷
GL5HD4 2 0 2 8 635 20 25 20 35 20 IO 4 20 l ÷
Colored diffusior. GL5HY4 2 0 2 8 585 20 20 20 30 20 IO 4 35 l ÷
GL5EG4 2.1 2 8 565 20 20 20 30 20 IO 4 35 l ÷
GL5KG4 2.1 2 8 555 20 6 5 20 25 20 10 4 40 l ÷


SWI1008TR82J Price
The information provided herein is believed to be reliable; however. C&D Technologies assumes no responsibility for inaccuracies or ormssions. C&D Technologies assumes no responsibility for the use of this information. and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. C&D Technologies does not authorize or warrant any C&D Technologies product for use in life support devices/systems or in aircraft control applications. C&D Technologies. Iso-ThermoFlex and T.E.A.M. Q are trademarks of C&D Technologies Corporation.
SWI1008TR82J on stock
By avoiding the use of LEDs and photodiodes, iCoupler devices remove the design difficulties commonly associated with optocouplers. The typical optocoupler concerns regarding uncertain current transfer ratios, nonlinear transfer functions, and temperature and lifetime effects are eliminated with the simple, iCoupler digitalinterfaces and stable performance characteristics. The need for external drivers and other discretes is eliminated with these iCoupler products. Furthermore, iCoupler devices run at one-tenth to one-sixth the power consumption of optocouplers at comparable signal data rates.

Parameter Symbol Values Unit
Collector-emitter voltage VCE 1 200 V
Collector-gate voltage RGE = 20 kQ VCGR 1 200
Gate-emitter voltage E ±20
DC collector current TC = 25 aC TC = 80 0C C 290 200 A
Pulsed collector current, tp = 1 ms TC = 25 aC TC = 80 0C /Cpuls 580 400
Power dissipation per IGBT TC = 25 aC Ptot 1 400 W
Chip temperature Ti +150 aC
Storage temperature Tstq -40+125