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SWICAO34 Datasheet

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
VCBO	collector-base voltage	open emitter		50	V
VCEO	collector-emitter voltage	open base		50	V
VEBO	emitter-base voltage	open collector		5	V
10	output current (DC)			100	mA
ICM	peak collector current			100	mA
Ptot	total power dissipation	Tamb " 25 IC; note 1		500	mW
Tstg	storage temperature		-65	+150
Tj	junction temperature			150	][C
Tamb	operating ambient temperature		-65	+150

SWICAO34 Price

The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ccm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system.
SWICAO34 on stock

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') Valid,ifleads are kept at ambient temperature at a distance of 10 mm from case Gultig, wenn die AnschluBdrahte in 10 mm Abstand von Gehause aufUmgebungstemperatur gehalten werden 2) Tested with pulses - Gemessen mitImpulsen 01.01.99 147

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