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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
SX010M0100GA3 TEAPOELECTRO    N/A    607000 

SX010M0100GA3 Datasheet
(tHIGH) while SDA is HIGH, the selected wiper will move one resistor segment towards the VH terminal. Similarly, for each SCL clock pulse while SDA is LOW, the selected wiper will move one resistor segment towards the VL terminal. A detailed illustration of the sequence for this operation is shown in Figure 5.
SX010M0100GA3 Price
Figure 27 shows the simplified schematic for a single amplifier. The amplifier contains a Butler Amplifier at the input. This front-end design uses both bipolar and MOSFET transistors in the differentialinput stage. The bipolar devices, Ql and Q2, improve the offset voltage and achieve the low noise perfor- mance, while the MOS devices, Ml and M2, are used to obtain higher slew rates. The bipolar differential pair is biased with a proportional-to-absolute-temperature (PTAT) bias source, IBl, while the MOS differential pair is biased with a non-PTAT source, IB2. This results in the amplifier having a constant gain- bandwidth product and a constant slew rate over temperature.
SX010M0100GA3 on stock

Level Indicated Voltage First Peak Current of Discharge (+ 10%) Rise Time With Discharge Switch Current at 30 ns Current at 60 ns
1 2 KV 7.5 A 0.7 t0 1ns 4A 2A
2 4 KV 15 A 0.7 t0 1ns 8A 4A
3 6 KV 22.5A 0.7 t0 1ns 12 A 6A
4 8 KV 30 A 0.7 t0 1ns 16 A 8A


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