MOTMap-5  > SX1B-72S-0.635SH
description CONN DIMM SOCKET SX1 5.5MM HIGH
Technical/Catalog Information SX1B-72S-0.635SH
Vendor Hirose Electric Co Ltd
Category Connectors
Lead Free Status Contains Lead
RoHS Status RoHS Non-Compliant
Other Names SX1B 72S 0 635SH SX1B72S0635SH H2342 ND H2342ND H2342

suppliers of SX1B-72S-0.635SH and PDF data of SX1B-72S-0.635SH

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

SX1B-72S-0.635SH Datasheet

N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR


SX1B-72S-0.635SH Price
Notel. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and form device to device. 4. A write occurs during the overlap of a low CSl#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CSl# going low, CS2 going high, WE# going low and LB# going low or UB# going low . A write ends at the earliest transition among CSl# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP iS measured from the beginning of write to the end of write. 5. tcw is measured from the later of CSl# going low or CS2 going high to end of write. 6. tAS iS measured the address valid to the beginning of write. 7. tWR iS measured from the earliest of CSl# or WE# going high or CS2 going low to the end of write cycle.
SX1B-72S-0.635SH on stock
The CB45000 series has internal macrocells that are robust in variety and performance. The cell selection has been driven by the need of Synthesis and HDL based design techniques. This offering is rich in buffers, complex combinatorial cells and multi power drive cells, which allow the Synthesis tool to create a netlist compatible with the requirements of Place and Route tools.

saac
t300&_ WA
l l[] l
t60al L&J LWA\tE j J
.1900j1&/\WAW
IIII[I Z
t120-.! flWAVE. jj
t18LW^vE~
l I I I _ y
t1800j-l.WAVE oc
r
-rT l III l l