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SX2024S05-NT Datasheet

Parameter	S ymbol	Condition	Min	Typ	Max	U nit
DR AIN-SOURCE DIODE CHARACTE RISTICS
Diode F orward Voltage	VSD	VGs = OV, Is =26A		O9	1,3	V

SX2024S05-NT Price

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 5V			50	nA
hFE	DC current gain	lc = 10 ccA; VCE = 1 V	20	30
hFE	DC current gain	lc = 1 rriA; VCE = 1 V	20	40
fT	transition frequency	lc = 1 mA; VCE = 1 V; f= 500 MHz	1.2	2.3		GHz
Ce	collector capacitance	IE = ie = 0; VCB = 0.5 V; f= 1 MHz			0.6	pF
Ce	emitter capacitance	le = ic = 0; VEB = 0; f= 1 MHz			0.5	pF
Cre	feedback capacitance	lc = 1 mA; VCE = 1 V; f= 1 MHz; Tamb = 25 IC			0.45	pF
GUM	maximum unilateral power gain (note l)	lc = 1 mA; VCE = 1 V; f= 500 MHz; Tamb = 25 IC		18		dB
GUM	maximum unilateral power gain (note l)	lc = 1 mA; VCE = 1 V; f= 800 MHz; Tamb = 25 IC		12		dB
F	noise figure	lc = 0.1 rriA; VCE = 1 V; f = 500 MHz; Tamb = 25 IC		5.5		dB
F	noise figure	lc = 1 mA; VCE = 1 V; f= 500 MHz; Tamb = 25 YC		3.8		dB

SX2024S05-NT on stock

Parameter	Description	Test Conditions	Max	Unit
CIN	Input Capacitance	TA = 25aC, f = 1 MHz,	6	pF
COUT	Output Capacitance	Vcc = VCC(typ.)	8	pF

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
Per diode
Ppp	peak pulse power	8/20 ffS pulse; notes l and 2		25	W
lpp	peak pulse current	8/20 ~s pulse; notes l and 2		2.5	A
Tj	junction temperature			150
Tamb	operation ambient temperature		-65	+150	][C
Tstg	storage temperature		-65	+150