PAGE ERASE: The optional Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized at a later time. To perform a Page Erase, an opcode of 81H must be loaded into the device, followed by four reserved bits, 11 address bits (PA10 - PAO), and nine don't care bits. The 11 address bits are used to specify which page of the memory array is to be erased. When a low-to-high transition
SXA15-24S3V3 Price| | Package OptIons |
| Device | 18-Pin Ceramic OIP | 18-Pin Plastic DIP | 20-Pln Small OutlIne Package | 20 Pin PlastIc Chip Carrier | 18-Pin Ceramlc DIP (MIL-STD-883 Processed') |
| HV6810 | HV6810D | HV6810P | HV6810WG | HV6810PJ | RBHV6810D |
| | | | | |
SXA15-24S3V3 on stock| Package | lo (continuous)' | lo (pulsed)' | Power Olsgipatlon @ Te = 250C | ejci oclw | % oc/w | IDR | IDRM* |
| T0-39. | 1.5A | 4A | 4W | ' 25 - | 125 | 2A | 4A |
| T0-92 | 0.8A | 4A | 1W | 125 | 170 | O8A | 4A |
| T0-220 | 3.OA | 4A | 28W | 4.8 | 70 | 3A | 4A |
| Plastic Dip | |
| Ceramic Dip | Refer to Arrays and Special Functions section. |
| | | | | | | |
