SXE63VB4R7M Datasheet| | | K9F6408QOC | K9F6408UOC | | | Parameter | Symbol | Min | Max | Min | Max | Unit | | Data Transfer from Cell to Register | tR | | 10 | | 10 | US | | ALE to RE Delay( ID read ) | tAR1 | 20 | | 20 | | ns | | ALE to RE Delay(Read cycle) | tAR2 | 50 | | 50 | | ns | | CLE to RE Delay | tCLR | 50 | | 50 | | ns | | Ready to RE Low | tRR | 20 | | 20 | | ns | | RE Pulse Width | tRP | 25 | | 25 | | ns | | WE High to Busy | tWB | | 100 | | 100 | ns | | Read Cycle Time | tRC | 50 | | 50 | | ns | | CE Access Time | tCEA | | 45 | | 45 | ns | | RE Access Time | tREA | | 35 | | 35 | ns | | RE High to Output Hi-Z | tRHZ | | 30 | | 30 | ns | | CE High to Output Hi-Z | tCHZ | | 20 | | 20 | ns | | RE or CE High to Output hold | tOH | 15 | | 15 | | ns | | RE High Hold Time | tREH | 15 | | 15 | | ns | | Output Hi-Z to RE Low | tIR | 0 | | O | | ns | | WE High to RE Low | tWHR | 60 | | 60 | | ns | | Device Resettirig Tirrie(ReadiProgramiErase) | tRST | | 5/10/500(1) | | 5/10/500(1) | US | | | Last RE High to Busy (at sequential read) | tRB | | 100 | | 100 | ns | | K9F6408UOC- T,Q,V,F only | CE High to Ready(in case of inter- ception by CE at read) | tCRY | | 50 +tr(R/B)c3) | | 50_+tr(R/ B)c3) | ns | | CE High Hold Time(at the last serial read)c2) | tCEH | 100 | | 100 | | ns | | | | | | | | |
SXE63VB4R7M Price| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | | Operating | Sequential Read | lccl | tRC=50ns, CE=ViL, IOUT=OmA | | 10 | 20 | | | Current | Program | lcc2 | | | 10 | 20 | mA | | Erase | lcc3 | | | 10 | 20 | | Stand-by Current(TTL) | ISB1 | CE=VIH, WP=OVNcc | | | 1 | | Stand-by Current(CMOS) | ISB2 | CE=Vcc-0.2, WP=OVNcc | | 10 | 50 | | | Input Leakage Current | |Ll | VIN=O t0 3.6V | | | ±10 | uA | | Output Leakage Current | ILO | VOUT=O t0 3.6V | | | ±10 | | Input High Voltage, All inputs | VIH | | 2 0 | | Vcc+0.3 | V | | Input Low Voltage, All inputs | VIL | | -0.3 | | 0 8 | | Output High Voltage Level | VOH | IOH=-40011A | 2 4 | | | | Output Low Voltage Level | VOL | IOL=2.1mA | | | 0 4 | | Output Low Current(R/B) | loL( R/B) | VOL=0.4V | 8 | 10 | | mA | | | | | | | | |
SXE63VB4R7M on stock (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. | Parameter | Symbol | Min | Max | Unit | | CLE Set-up Time | tCLS | 20 | | ns | | CLE Hold Time | tCLH | 40 | | ns | | CE Setup Time | tcs | 20 | | ns | | CE Hold Time | tCH | 40 | | ns | | WE Pulse Width | tWP | 40 | | ns | | ALE Setup Time | tALS | 20 | | ns | | ALE Hold Time | tALH | 40 | | ns | | Data Setup Time | tDS | 30 | | ns | | Data Hold Time | tDH | 20 | | ns | | Write Cycle Time | twc | 80 | | ns | | WE High Hold Time | tWH | 20 | | ns | | | | | |
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