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SY-3W-K Datasheet

N	Name	Fun ction
1	VS	Supply Voltage
2	OUT2	Channel 2: Push-Pull power output with intrinsic body diode
3, 8, 13, 18,20	NC	NC: Not Connected
4 t0 7, 14 t0 17	GND	Ground: signal - and power - ground, heat sink
9	IN2	Input 2: Schmitt Trigger input with hysteresis (non-inverting signal control)
10	EN	Enable: LOW or not connected on this input switches the device into standby mode and the outputs into tristate
1 1	DIAG	Diagnostic: Open Drain Output that switches LOW if overvoltage or overtemperature is detected
12	IN1	Input l: Schmitt Trigger input with hysteresis (non-inverting signal control)

SY-3W-K Price

Table 8. Autoselect Codes (High Voltage Method) .................. 49 Table 9. PL127J Boot Sector/Sector Block Addresses for Protection/ Table 10. PL064J Boot Sector/Sector Block Addresses for Table 11. PL032J Boot Sector/Sector Block Addresses for Protection/Unprotection ............ . 52 Table 12. Sector Protection Schemes. . 53 Sector Protection Schemes . . . . . . . . . . . . . . . . . 53 Persistent Sector Protection . . . . . . . . . . . . . . . . 54 Persistent Sector Protection Mode Password Protection Mode .. .. ... .. .. ... .. . 56 Password and Password Mode Locking Bit ....... ...........................56 Figure l. In-System Sector Protection/Sector Unprotection Figure 2. Temporary Sector Unprotect Operation ................... 60 Secured Silicon Sector Flash Memor Figure 3. Secured Silicon Sector Protect Verify ...................... 62 Common Flash Memory Interface (CFI) ...... 63 Table 13. CFI Query Identification String .............................. 63 Table 14. System Interface String . 64 Table 15. Device Geometry Definitio~ 64 Table 16. Primary Vendor-Specific Extended Query ................ 65 Command Definitions ... ....... 66
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We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

3) Positive And Negative Real Power Error When the positive real power and the negative real power is equal, and V(v) =+llOmV, the test current is Ib, then the positive and negative real power error can be achieved by the following formula: eNP%=l[(eN%-eP%)/(l+eP%)]*100%1 Where: eP% is the Positive Real Power Error, eN% is the Negative Real Power Error.

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