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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

SY-6W-K-DC6V Datasheet

Microsemi Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltaqe Maximum RMS Voltage Maximum DC Blocking Voltaqe
RS801 RS801 50V 35V 50V
RS802 RS802 100V 70V 100V
RS803 RS803 200V 140V 200V
RS804 RS804 400V 280V 400V
RS805 RS805 600V 420V 600V
RS806 RS806 800V 560V 800V
RS807 RS807 1000V 700V 1000v


SY-6W-K-DC6V Price

Symbol Parameter Test Conditions Min Typ. Max Unit
V(BR)DSS Drain-source Breakdown Voltage ID = 250 ccA VGS = 0 500 V
IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating Te = 125 0C 1 50 ccA ccA
IGSS Gate-body Leakage Current (VDS = 0) VGS=±30 V ±1 00 nA


SY-6W-K-DC6V on stock

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VDRM Repetitive peak off-state -500 5001 -600 6001 -800 800 V
lT(RMS) ITSM 12t dIT/dt IGM VGM PGM PG(AV) Tstg Tj voltages RMS on-state current Non-repetitive peak on-state current 12t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature full sine wave; The " 56 aC full sine wave; Tj = 25 0C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/~s T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period -40 12 95 105 45 50 50 50 10 2 5 5 0.5 150 125 A A A A2S A/~s A/~s A/~s A/~s A V W W aC aC


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