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SY10E195JCTR Datasheet

Reference Voltage (lo = 1.0 mA) Vref 4 75 5.0 5.25 V
Line Regulation (Vcc = 7.0 V t0 40 V) RegImne 2.0 25 mV
Load Regulation (lo = 1.0 mA t0 10 mA) Regload 3.0 15 mV
Short Circuit Output Current (Vref = 0 V) lsc 15 35 75 mA


SY10E195JCTR Price
Materials Tube: Glass End Caps: Nickel-plated brass Plug-on Caps: Silver-plated brass Operating Temperature -250C to +700C (consider de-rating) Climatic Test Damp heat, steady state 400C/95%/21 days (IEC 60068-2-3) Stock Conditions +lOoC to +600C relative humidity " 75% yearl'/ average, without dew. maximum value for 30 da,/s-95% Vibration Resistance 24 c'/cles at 15 min. each (IEC 60068-2-6) 10 - 60Hz at 0.75mm amplitude 60 - 2000Hz at 10g acceleration
SY10E195JCTR on stock

Output voltage Output current VQ IQ - 0.3 7 V Internally limited


SPECIFICATNONS (Tj = 250C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 yA -0.45 -0.8 V
Gate-Body Leakage IGSS VDS=OV,VGS=8V 100 nA
VDS = -16 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V, Tj = 700C -10 yA
On-State Drain Currenta ID(on) VDS -5 V, VGS = -4.5 V 20 A
VGS = -4.5 V, ID = -7.4 A 0 011 0 015
Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -6.3 A 0 015 0 020 Q
VGS = -1.8 V, ID = -5.5 A 0 020 0 027 Q
Forward Transconductancea 9fs VDS = -15 V, ID = -7.4 A 34 s
Diode Forward Voltagea VSD Is = -1.3 A, VGS = 0 V -0.64 -1.1 V
Dynamicb
Total Gate Charge Qg 40 60
Gate-Source Charge Qgs VDS = -10 V, VGS = -5 V, ID = -7.4 A 5.2 nC
Gate-Drain Charge Qgd 8
Turn-On Delay Time td(on) 35 55
Rise Time tr VDD = -10 Y RL = 15 Q 40 60
Turn-Off Delay Time td(off) ID -1 A, VGEN = -4.5 V, RG = 6 Q 190 300 ns
Fall Time tf 90 150
Source-Drain Reverse Recovery Time trr IF = -1.3 A, di/dt = 100 A/ys 75 120