SY10EP58V Datasheet| Characteristic | Symbol | Min | Max | Unit | Test Condition | | Reverse Breakdown Voltage (Note l) | V(BR)R | 75 | | V | IR= 1.OIlA | | Forward Voltage (Note l) | VFM | | 0.715 0.855 1.0 1.25 | V | IF = l.OmA IF = lOmA IF = 50mA IF = 150mA | | Peak Reverse Current (Note l) | IRM | | 1.0 50 30 25 | uA uA uA nA | VR = 75V VR = 75V, Ti = 1500C VR = 25V, Ti = 1500C VR = 20V | | Total Capacitance | CT | | 2.0 | pF | VR = 0, f = 1.OMHz | | Reverse Recovery Time | trr | | 4.0 | ns | IF = IR = lOmA, lrr = O.l x IR, RL = 100Q | | | | | | |
SY10EP58V Price| | | | | | | | | | | TA=25IC Non-Repetitive | | | | | | | | | | | | + | l | | | | | | | L | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
SY10EP58V on stock| | 1N3879 -1N3883 | 1N3889 -1N3893 12FL... | 16FL Units | | | Tj Junction aperating temperature range : -65 t0 150 | oc | | | Tstg Storage temperature range | -65 t0 175 | ac | | RthjC Maximum internal tharmal resisiance, lunction to casB | 2 5 | 2 0 1 6 f | deg C/W | | | siance, case to . 0 5 ! deg C/W RthCS :eaatsmukm thermal resisiance | Mouming surface flat. smooth and greased. | | T Mounung torque to nut | | | Lubricated threads | | + i0% | | kgf.m . (Nori-Iub7Icalea irireaOsl | | | Nm | | to device | 5{13.51 | bf.in | | | 0.13 (0.155l | kgf.m | | 1.3¨351 Nm | | wt Approximata weight | | | | | Case style | D0-203AA (D0-4I | | | | | | | | |
Notes: 1. TA = TSOLDERING POINT, ROJS = 2.50C/W, RoSA = ooC/W. 2. Device mounted on GETEK substrate, 2"x2", 2 0z. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RejA in range of 15-300C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 0z. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RejA in range of 60-750C/W.
|
