| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact |
SY10H641 Datasheet
SY10H641 Price Exit Bypass Mode (XBY) Instruction. This in- struction uses two write cycles. The first inputs to the memory the command 90h and the second in- puts the Exit Bypass mode confirm (OOh). After the XBY instruction, the device resets to Read Memo- ry Array mode. Program in Bypass Mode (PGBY) Instruc- tion. This instruction uses two write cycles. The Program command AOh is written to any Address on the first cycle and the second write cycle latch- es the Address on the falling edge of W or E and the Data to be written on the rising edge and starts the P/E.C. Read operations within the same bank output the Status Register bits after the program- ming has started. Memory programming is made only by writing '0' in place of '1'. Status bits DQ6 and DQ7 determine if programming is on-going and DQ5 allows verification of any possible error. SY10H641 on stock I Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. |
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