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SY16012 Datasheet

			Limits
Characteristic	Symbol	Test Conditions	Min. Typ. Max.	Units
Internal Reference Voltage	Vref		0.97 1.00 1.03	V
Ref. Volt. Temp. Coeff.	aVref		+0.5	mV/oC
Output Short-Circuit Current	IOM	See note	3.1	A
Efficiency	11	V, = 20 V. Vo = 5 V. lo = 1 A	86	%
Operating Frequency	f		250	kHz
Overvoltage Protection	VIM	10=10 mA	33	V
Line Regulation	CVo(Cvl)	V=10V30V	20 40	mV
Load Regulation	CVo(Clo)	10 = 0.1 A N l.5 A	10 30	mV
Quiescent Current	llo	Io=OA	7.0	mA
Quiescent Current	llo	VOEiSS = 0.3 V	400	lJA
Chip Enable Voltage	VOEss	Device turn-off voltage	0.5	V
Soft-Start Current	lOEss	VOE/SS 2 0 V	-50	pA

SY16012 Price

		Device mounted on a glass-epoxy board (a) (Note 2a)
-(1)		(1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board
-(2)		(b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
-(3		:10 s

(4)				j
	1		-

SY16012 on stock

	Parameter	Max	Units
VDS	Drain- Source Voltage	-20	V
ID@TA= 25C	Continuous Drain Current, VGS @ 4.5V	+5.1	A
ID@TA= 70C	Continuous Drain Current, VGS @ 4.5V	+3.5
IDM	Pulsed Drain Current	+35
PD @TA= 25C	Power Dissipation	22
PD @TA= 70C	Power Dissipation	1.4	W
	Linear Derating Factor	17	mW/oC
VGS	Gate-to-Source Voltage	±12	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to+ 150	oC

*Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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