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SY171 Datasheet

vcc = 150V VGE = 15V
Tj = 1250C
lc = 400)
j
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SY171 Price

Item Syml)ol Cond]tion typ max Unit
Co[lector cutoff current (1) Vc13=40V, [E=O 50 A
Emitter cutoff current Irj() VI.F3 = 5V. ItJ = O 50 pA
Collector-emitter voltage VU() I( = lOmA, If3 = O 20 V
hf?F VCF = 2V, Ic= O.lA 45
DC current gain hIF2 VCI: - 2V, Ic.= 2A 60 260
Collector-enutter saturanon voItage V(-IcdI I( = 5A, IH = 0.16A O6 v
Base-ermtter saturation voltage Vl31.[d 1(.= 5A, IR = 0.16A 1.5 V
Transition frequency fT VC.f.=lOV, Ic=0.5A, f=lOMHz 150 MHz
Collector output capacitance Ch VCH=10V. IF=O, f=lMHz 110 pF
IUm0n Ume tIIn 0.3 S
Storage tlme tbtF! IC=2A,If31=66mA,If32=-66mA 0.3 S
Fall time tf O1 S


SY171 on stock

Parameter Symbol -7 -8 ·10 -12 ·15 Unit
Min Max Min Max Min Max Min Max Min Max
Read cycle time tRC 7 8 10 12 15 ns
Address access time tAA 7 8 10 12 15 ns
Chip enable access time (CE) tAC 7 8 10 12 15 ns
Output enable to output valid (OE) tOE 3.5 4 5 6 7 ns
Output hold from address change tOH 2 2 2 3 3 ns
Chip enable to output in low Z (CE) tLZ 2 2 2 3 3 ns
Output enable to output in low Z (OE) tOLZ 0 0 0 0 0 ns
Chip disable to output in High Z (CE) tHZ 3.5 4 5 6 7 ns
Output disable to output in High Z (OE) tOHZ 3 3.5 4 5 6 ns


VFGM=' X I II I I I l\ VGT=3.OV VI I II 0 j IIl l lN l PG l l lJ l l l V 2 II -5.OV II -o-
IGTI I N ||
'50mA-\ _T I I ll=l L 2 o
-250C
l h G D= -0.2 iI
l l l l l l l l l l l l l l