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SY2114A-4 Datasheet Test conditions assume signal transition time of 5 ns or less timing reference levels of l.5V, input pulse levels of O t0 3.OV, and output loading of the specified IOL/IOH and 100-pF load capacitance. At any given temperature and voltage condition, tHZCE iS less than tLZCE, tHZOE iS less than ti_ZOE, and tHZWE iS less than tl_ZWE for any given device. tHZOE, tHZCE, and tHZWE are specifIed with CL = 5 pF as in part (b) ofAC Test Loads. Transition is measured +200 mV from steady-state voltage. The internal write time of the memory is defined by the overlap of CEi LOW, CE2 HIGH, and WE LOW. CEi and WE signals must be LOW and CE2 HIGH to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge ofthe signalthat terminates the write The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum oftHZWE and tSD SY2114A-4 Price
SY2114A-4 on stock
Switching system This low.level switching system was designed for switching low powers in electronic circuits. The switching system assures reliable switching of loads. Single.break momentary contact. as normally open or normally closed with 4 independent points of contact. Special features are the long life, extremely short rebound time and stable contact resistance. |