| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| SY2149H | DIP18 | 2007+ | E-mailtome. | 9985 |
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| SY2149H | SYN | n/a | 全新原装现货热卖 | 2616 |
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SY2149H Datasheet FEATURl:S . '- 1. I:iFh Output, High Gain : Po=17W, Gpe=10.5dB; ei271IHz, 12V 2. Low. IMD. 3rd; -30dB(TYP), llth; -62dB(TYP), and higher order IMD ; bellowhan -65dB. @ Vcc=13.5y, Po=14W . . 1P . '. 3. Comrenient plastic molded package. .'.' APPLICATIONS ' SY2149H Price The Typical Operating Circuit shows a typical connec- tion for the MAX6361/MAX6363/MAX6364 family. OUT powers the static random-access memory (SRAM). OUT is internally connected to VCC if VCC is greater than the reset threshold, or to the greater of VcC or VBATT when vcc is less than the reset threshold. OUT can supply up SY2149H on stock R WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 |
