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GENERAL DESCRIPTION The K9K1208UOM are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200Us and an erase operation can be per- formed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The l/0 pins serve as the ports for address and data input/output as well as com- mand inputs. The on-chip write controller automates all pro- gram and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208UOM's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208UOM-YCBO/YIBO is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requir- ing non-volatility.
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