The third operating mode is required when programming the non-volatile memory portions of the DS2703. The programming mode is defined by the application of a high voltage programming pulse to the DQ pin at the appropriate point during a Compute Secret command, Load/Lock Secret or Clear/Set Overdrive Timing command. The internal voltage regulator limits the internal voltage (VDD_INT) to isolate low voltage portions of the chip from the HV programming pulse. Typically, programming mode is used during module or pack manufacture to configure the DS2703 and program the 64-bit secret.
SY55855VKC Price| SYMBOL | PARAMETER | MIN | MAX | UNIT |
| VDS | drain-source voltage | | 65 | V |
| VGS | gate-source voltage | | +15 | V |
| ID | drain current (DC) | | 18 | A |
| Tstg | storage temperature | -65 | +150 | ][C |
| Tj | junction temperature | | 200 | ][C |
| | | | |
SY55855VKC on stock| PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | CONDITIONS. |
| Reverse Breakdown Voltage | V(BRIR | 30 | 50 | | V | IR=lOptA |
| Forward Voltage | | | | 135 200 280 350 530 | 240 320 400 500 1000 | mV mV mV mV mV | IF=O.lmA IF=lmA IF=lOmA IF=30mA IF=lOOmA |
| Reverse Current | IR | | 1.4 | 2 | UA | VR=25V |
| Diode Capacitance | CD | | 7.5 | 1 0 | pF | f=lM Hz,VR=lV |
| Reverse Recovery Time | t r r | | | 5 | ns | switched from IF=lOmA to IR=lOmA RL=100Q, IR=lmA |
| | | | | | |
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| td(on) tr | Turn-on Time Rise Time | VDD = 50 V ID = 2.5 A RG = 4.7 I VGS = 5 V | | 7 17 | 9 22 | ns ns |
| Qg Qgs Qgd | Total Gate Charge Gate-Source Charge Gate-Drain Charge | VDD = 80 V ID = 5 A VGS = 5 V | | 10 5 4 | 14 | nC nC nC |
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