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TPS3707-50DG4

description	IC 4.55V PROCESSOR MON 8-SOIC
Technical/Catalog Information	TPS3707-50DG4
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
RoHS Status	RoHS Compliant
Other Names	TPS3707 50DG4 TPS370750DG4
Lead Free Status	Lead Free
Type	Simple Reset/Power-On Reset
Packaging	Tube
Operating Temperature	-40°C ~ 85°C
Package / Case	8-SOIC (3.9mm Width)
Output	Push-Pull, Totem Pole
Reset	Active High/Active Low
Number of Voltages Monitored	1
Reset Timeout	140 ms Minimum
Voltage - Threshold	4.55V

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suppliers of TPS3707-50DG4 and PDF data of TPS3707-50DG4

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TPS3707-50DG4	TI	SOP	08+		10000	A-RICH HK LECTRON CO.,LIMITED Contact:JING ZHOU Tel:86-755-33377586 Fax:86-755-33377578 Email: ARICH2@yahoo.cn
TPS3707-50DG4	TI	SOP		in stock	10155	WT Technology Int l.HK LIMITED Contact:Vivien Tel:86-755-82953360 Fax:86-755-82579304 Email: wt1@kwl-ic.com

TPS3707-50DG4 Datasheet

CHARACTERISTIC	SYMBOL	TEST CONDITION	MIN	TYP	MAX	UNIT
Collector Cut-off Current	ICBO	VCB = 30 V, IE = O			100	nA
Emitter Cut-off Current	IEBO	VEB = 6 V, IC = 0			100	nA
Collector-Emitter Breakdown Voltage	VCEO	IC = lO rnA, IB = 0	10			V
	nFE(1)	VCE = 2 V, IC = 0.5 A	200		600
DC Current Gain	nFE(2)	VCE = 2 V, IC = 3A	140	200
Collector-Emitter Saturation Voltage	VCE (sat)	IC = 3 A, IB = 60 mA		O33	0.5	V
Base-Emitter Voltage	VBE	VCE = 2 V, IC = 3A		O92	1.2	V
Transition Frequency	fT	VCE = 2 V, IC = 0.5 A		150		MHz
Collector Output Capacitance	Cob	VCB = 10V,IE = O, f= 1MHz		27		pF

TPS3707-50DG4 Price

Pafameter	Symbor	CondItIons	Ratings	Unlt
Macrdmum suppIy voltaga	vcc max		7.0	V
Mmdmum output current	lo maxl	l0.5S	1.0	A
MEcdmum staady-state output currem	lo nwc2		0.7	A
Allowabfe power dIsslpation	Pd max	Independent lC	0.5	w
Operating temperature	Topr		-20 to +80	'c
Staragelemperature	Tstg		40 to+150

TPS3707-50DG4 on stock

.a -4.0 -3.0 -2.0 -1.0			---- - -J_ - - J_
	-50 -100 150	2:0 3 I I - - - H - -. '5 m, ---1 @2! i- I I - - - !- - - - r I I I	0 40 5 Control iCpulsed

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO	collector-base cut-off current	VCB = 30 V; IE = 0			15	nA
ICBO	collector-base cut-off current	VCB = 30 V; IE = 0; Tj = 150 IC			5
IEBO	emitter-base cut-off current	VEB = 5 V; lC = 0			100	nA
hFE	DC current gain	VCE = 5 V; lC = 2 mA	200		450
VCEsat	collector-emitter saturation	lc = 10 mA; lB = 0.5 mA			100	mV
VCEsat	voltage	lc = 100 mA; lB = 5 mA; note 1			300	mV
VBEsat	collector-emitter saturation voltage	lc = 10 mA; lB = 0.5 mA		755		mV
fT	transition frequency	lc = 10 rriA; VCE = 5 V; f= 100 MHz	100			MHz
NPN trans	stor
VBE	base-emitter turn-on voltage	VCE = 5 V; lC = 2 mA	580	655	700	mV
Ce	collector capacitance	VCB = 10 V; IE = le = 0; f= 1MHz			1.5	pF
Ce	emitter capacitance	VEB = 500 mV; lc = le = 0; f= 1MHz		1 1		pF
PNP trans	stor
VBE	base-emitter turn-on voltage	VCE = -5 V; lC = -2 mA	600	655	750	mV
Ce	collector capacitance	VCB = -10 V; lC = le = 0; f= 1MHz			212	pF
Ce	emitter capacitance	VEB = -500 rriV; IE = le = 0; f= 1MHz		10		pF