TPS40200EVM-001 Datasheet| Symbol | Parameter | Test Condition | Min | Max | Unit | | kl | Input Leakage Current | OVVINVCC | | +2 | | | ILO | Output Leakage Current | OV ,, VOUT " VCC SDA in Hi-Z | | +2 | | | lcc | Supply Current (ST24 series) | Vcc = 5V, fc = 100kHz (Rise/Fall time < 10ns) | | 2 | mA | | Supply Current (ST25 series) | Vcc = 2.5V, fc = 100kHz | | 1 | mA | | | Supply Current (Standby) | VIN = Vss or Vcc, Vcc = 5V | | 100 | cCA | | lccl | (ST24 series) | VIN = VSS or Vcc, Vcc = 5V, fc = 100kHz | | 300 | | | | Supply Current (Standby) | VIN = Vss or Vcc, Vcc = 2.5V | | 5 | | | ICC2 | (ST25 series) | VIN = VSS or Vcc, Vcc = 2.5V, fc = 100kHz | | 50 | | | VIL | Input Low Voltage (SCL, SDA) | | -0.3 | 0.3 Vcc | V | | VIH | Input High Voltage (SCL, SDA) | | 0.7 Vcc | Vcc +1 | V | | VIL | Input Low Voltage (PBO - PBl, PRE, MODE, WC) | | -0.3 | 0.5 | V | | VIH | Input High Voltage (PBO - PBl, PRE, MODE, W ) | | Vcc - 0.5 | Vcc +1 | V | | | Output Low Voltage (ST24 series) | IOL = 3mA, Vcc = 5V | | 0.4 | V | | VOL | Output Low Voltage (ST25 series) | IOL = 2.1mA, Vcc = 2.5V | | 0.4 | V | | | | | | | TPS40200EVM-001 Price| SYMBOL | SIZE | TOL. | UNIT | | H1 | 3.40 | +0.30 | mm | | H2 | 1.20 | +0.40/-0.20 | mm | | L1 | 3.20 | +0.10 | mm | | L2 | 5.10 | +0.30 | mm | | wl | 0.45 | +0.05/-0.10 | mm | | W2 | 0.50 | +0.20/-0.10 | mm | | P | 0.80 | | mm | | | | | TPS40200EVM-001 on stock| Silicon l'Jli\}:il | | N-channel logic level TrenchMOSTM transistor PSMN004-25B, PSMN004-25P |
| Parameter | 1101111RIA | Units | Conditions | | PGM Maximum peak gate power | 12 | W | T, = Ti rnax, t " 5ms JJ'p | | PG(AV, Maximum average gate power | 3 0 | Tj = Tj max, f = 50Hz, d% = 50 | | IGM Max. peak positive gate current | 3 0 | A | T, = T, max, t " 5ms JJ'p | | VGM Maximum peak positive gate voltage | 20 | V | T, = T, max, t " 5ms | | -VGM Maximum peak negative gate voltage | 10 | JJ'p | | | TYP | MAX | | | | IGT DC gate current required to trigger | 180 80 40 | 120 | mA | T, = - 400C Tj= 250C Max. required gate trigger/ cur- T ] = 1400C rent/voltage are the lowest value | | VGT DC gate voltage required to trigger | 2 5 1 6 | 2 | V | which will trigger all units 12V T, = - 400C anode-to-cathode applied Tl= 250C T, = 1400C | | IGD DC gate current not to trigger | 6 0 | mA | Max. gate current/voltage not to trigger is the max. value which | | VGD DC gate voltage not to trigger | 0 25 | V | T ] = Tj max will not trigger any unit with rated VDRM anode-to-cathode applied | | | | | | |