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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
TPS73630 TI  DIP/SOP  09+  现货热卖,全新原装,欢迎来电  5180 

TPS73630 Datasheet

SYMBOL PARAMETER CONDITIONS RATING UNIT
Vcc DC supply voltage -0.5 to +6.5 V
IIK DC input diode current VI <0 -50 mA
VI DC input voltage Note 2 -0.5 to +5.5 V
IOK DC output diode current Vo >Vcc or VO < 0 50 mA
VO DC output voltage Note 2 -0.5 to Vcc +0.5 V
10 DC output source or sink current Vo=0to Vcc 50 mA
IGND, ICC DC Vcc or GND current 100 mA
Tstg Storage temperature range -65 to +150 YC
PTOT Power dissipation per package - plastic mini-pack (SO) - plastic shrink mini-pack (SSOP and TSSOP) above +70YC derate linearly with 8 mW/K above +60YC derate linearly with 5.5 mW/K 500 500 mW


TPS73630 Price
This circuit divides the external clock frequency down to the switching frequency of the low pass and high pass switched capacitor filters. The divider also contains a TTL-CMOS in- terface circuit which converts the external TTL clock level to the CMOS logic level required for the divider logic. This in- terface circuit can also be directly driven by CMOS logic. A frequency select circuit is provided to allow the filter to oper- ate with 2.048 MHz, 1.544 MHz or l.536 MHz clock frequen- cies. By connecting the frequency select pin CLKO (pin 14) to Vcc, a 2.048 MHz clock input frequency is selected. Digi- tal ground selects l.544 MHz and VBB selects l.536 MHz.

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)CBO collector-base breakdown voltage lc = 30 mA; open emitter 75 V
V(BR)CES collector-emitter breakdown voltage lc = 30 rriA; VBE = 0 75 V
ICBO collector leakage current VCB = 40 V; IE = 0 3 mA
ICES collector leakage current VCE = 40 V; VBE = 0 6 mA
IEBO emitter leakage current VEB = 1.5 V; lC = 0 0.6 mA
hFE DC current gain VCE = 5 V; lC = 3A 40 100