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TPS75118QPWPRQ1R Datasheet
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transi- stor shows extremely high packing density forlow on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- marka ble manufacturing reproducibility.
TPS75118QPWPRQ1R Price

Parameter Description Min Typ. Max Unit
tPLH Propagation Delay - Low to High See Figure 7 1.5 2.7 3.5 nS
tPHL Propagation Delay - High to Low 1.5 2.7 3.5 nS
tR Output Rise Time 20 - 80% 0.2 1.5 nS
tF Output Fall Time 20 - 80% 0.2 1.5 nS
tSK(O) Output Skew: Skew between outputs of the same package (in phase). See Figure 10 0.2 nS
tSK(p) Pulse Skew: Skew between opposite transitions of the same output (tPHL - tPLH). See Figure 9 0.2 nS
tSK(t) Package Skew: Skew between outputs ofdifferent packages atthe same power supply voltage, temperature and package type. See Figure 11 0.4 nS


TPS75118QPWPRQ1R on stock
Analog Input Voltage (either input) (Note l) ......... V+ to V- Reference Input Voltage (either input) ................. V+ to V- Power Dissipation (Note 2) (TA " 70IC) 40-Pin Plastic DIP ....... ... 1 .23W Operating Temperature "C" Devices .... ..... OIC to +70IC Storage Temperatu re ........ ........... - 65IC to +1 50IC Lead Temperature (Soldering, 10 sec) .................+300YC
Typical S-Parameter D S.l S2l SlZ dB A dD Ang dB An8 -17.5 -139.4 32.3 -4.0 -35.9 8.8 -17.8 -167.9 32.3 -22.4 -35.7 1.4 -10.5 159.7 32A -52.8 -35.5 -4.2 -18.4 144.0 32.6 -83.6 -35.0 -9.9 -18.3 121.8 32.6 -115.S -34.6 -J5.0 -JS.5 104.3 32.2 -149.6 -34.1 -20.5