TPS75401PWP Datasheet| Characteristics | Symbol | Rating | Unit | | Collector-emitter voltage | VCES | 600 | V | | Gate-emitter voltage | VGES | +20 | V | | | DC | lc | 30 | A | | Collector current | 1 ms | ICP | 60 | A | | Collector power dissipation (Tc = 250C) | Pc | 37 | W | | Junction temperature | Tj | 150 | oc | | Storage temperature range | Tstg | -40125 | oc | | | | | |
TPS75401PWP Price Mounting: Heat sink flatness must be less than 50 pm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 t0 0.6 Nm. TPS75401PWP on stock| | | CX1 1 I RX CX (1) 21 RESET (1) 31 +TR 0) 4 - TR (1) 5 al 6 al 7 VSS 8 | | 16 VDD 15 CX2 14 RX CX(2) 13 RE5ET (2J 12 +TR (2) 11 -TR (2) 10 Q 2 9 Q2 | | S-2169II | | | |
| CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITION | | Collector Cutoff Current | ICBO | | | 0.1 | | VCB = 5 V, IE = 0 | | Emitter Cutoff Current | IEBO | | | 0.1 | cq | VEB = 1 V, le = 0 | | DC Current Gain | hFE | 75 | | 150 | | VCE = 3 V, le = 5 mA'1 | | Gain Bandwidth Product | fT | | 12 | | GHz | VCE = 3 V, le = 5 mA, f = 2.0 GHz | | Feed back Capacitance | Cre | | 0 3 | 0.5 | pF | VCB = 3 V, IE = 0, f = 1 MHz*2 | | Insertion Power Gain | IS21el2 | 7 | 8 5 | | dB | VCE = 3 V, le = 5 mA, f = 2.0 GHz | | Noise Figure | NF | | 2.5 | 4 0 | dB | VCE = 3 V, le = 3 mA, f = 2.0 GHz | | | | | | | |
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